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深圳黃金樹科技有限公司代理國內MOSFET，IC 集成電路，橋堆 二三極管 可控硅等電子產品， 產品主要應用于UPS、EPS、逆變電源、工業控制板、變頻電源、開關電源、電力操作電源、小家電，新能源，汽車電子等高科技行業，并致力于推廣供應環保無鉛的綠色產品。 我們本著“誠信經營，互惠互贏”的理念貫穿供應，銷售，服務的始終。我們始終將“創新，進取，誠信合作，品質第一，客戶第一，服務至上”作為商務合作發展的基石，愿我們持續，共同發展！深圳黃金樹科技有限公司是國內外知名的電子元器件混合分銷商，成立于深圳龍華區，主要產品有SPM、IGBT、MOSFET、FRD(快恢復）、可控硅、光耦、IC、MCU等。代理品牌有：無錫新潔能（NCE)，江蘇捷捷微（JJM),福斯特（FIRST),臺灣博盛（POTENS)，優勢現貨品牌有UTC友順，安森美(ON)，英飛凌(Infineon) ,NXP,ADI,RICHTEK,TI等。
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VDS =30V,ID =120A

    RDS(ON) <3.5mΩ @ VGS=10V (Typ:3.0mΩ)

Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCE30H12K NCE30H12K TO-252-2L - - - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 120 A Drain Current-Continuous(TC=100℃) ID (100℃) 84 A Pulsed Drain Current IDM 400 A Maximum Power Dissipation PD 120 W Single pulse avalanche energy (Note 5) EAS 350 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃

NCE30H12K Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 30 - - V Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1 1.6 3 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=20A - 3.5 4.5 m? Forward Transconductance gFS VDS=10V,ID=20A 50 - - S Dynamic Characteristics (Note4) Input Capacitance Clss 4120 PF Output Capacitance Coss 498 PF Reverse Transfer Capacitance Crss VDS=25V,VGS=0V, F=1.0MHz 456 PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - 11 - nS Turn-on Rise Time tr - 10 - nS Turn-Off Delay Time td(off) - 38 - nS Turn-Off Fall Time tf VGS=10V,VDS=20V RL=0.75Ω,RGEN=3Ω - 11 - nS Total Gate Charge Qg 79 nC Gate-Source Charge Qgs 9 nC Gate-Drain Charge Qgd VGS=10V,VDS=15V,ID=20A 18 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=20A - - 1.2 V Diode Forward Current (Note 2) IS - - 120 A Reverse Recovery Time trr - 58 - nS Reverse Recovery Charge Qrr TJ = 25°C, IF =60A di/dt = 100A/μs(Note3) - 115 - nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)